术语 | electron beam accessed memory |
释义 | electron beam accessed memory 电子束存取存储器;[电子束接达记忆器] A memory that is written and read by an electron beam. In the writing action the beam either does, or does not, deposit electrons according to a one or zero input. In the reading action the effect of the beam on the charged or uncharged area is detected. 一种用电子束进行读/写的存储器。在写操作时,根据输入是1还是0决定电子束是否沉积 电子。在读操作时,则是检测电子束在有电荷区或无电荷区的效应。 |
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