| 术语 | electron beam accessed memory |
| 释义 | electron beam accessed memory 电子束存取存储器;［电子束接达记忆器］ A memory that is written and read by an electron beam. In the writing action the beam either does, or does not, deposit electrons according to a one or zero input. In the reading action the effect of the beam on the charged or uncharged area is detected. 一种用电子束进行读／写的存储器。在写操作时,根据输入是1还是0决定电子束是否沉积 电子。在读操作时,则是检测电子束在有电荷区或无电荷区的效应。 |
| 随便看 |
|
计算机英汉双解词典包含21137条计算机术语英汉翻译词条，基本涵盖了全部常用计算机术语的翻译及用法，是计算机学习及翻译工作的有利工具。