| 术语 | metal-alumina-oxide-semiconductor memory (MAOS-memory) |
| 释义 | metal-alumina-oxide-semiconductor memory (MAOS-memory) 金属铝氧化物半导体存储器 A non-volatile memory, the content of which is electrical erasable. It is of the same kind as the MNOS memory and has the same architecture. The difference is that aluminium oxide replaces silicon nitride in MAOS device. The threshold voltage of MAOS memory is positive and the duration time of memorized content is longer as compared with MNOS device. 用电的方法可以擦去存储器内容的一种非易失性存储器。这种存储器与MNOS存储器属于同一类型,并具有相似的 结构。所不同的是在MAOS中用氧化铝代替氮化硅。与MNOS结构相比,MAOS存储器的阈值电压是正的, 存储保持时间较长。 |
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