释义 |
MNOS 金属-氮化物-氧化物-硅[半导体] A type of electrically alterable read-only memory (EAROM) that can be programmed by means of electrostatic charges in silicon nitride (Si3N4) gate regions. 一种靠栅区氮化硅(Si3N4) 中的静电荷来编程的电可改只读存储器。Metal-Nitride-Oxide-Silicon or Metal-Nitride-Oxide-Semiconductor的缩写。 参阅MOS,fieldeffect transistor, FAMOS。 |