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术语 MOS dynamic random access memory
释义 MOS dynamic random access memory
MOS动
态随机存取存储器;[MOS动态随机接达记忆器] The most important kind of MOS random access memories, which uses capacitor to be as a memory element and MOS transistor to be as a select switch of address. In order to complement the loss of stored charge (data), which is caused by leakage current of PN junction, it is necessary to charge periodically called refresh. Since its feature is of simple cell structure, high integrated density, low power dissipation, low cost per bit, it is usually used for large capacity memory.MOS 随机存取存储器中最主要的一种,它利用电容作为存储元件和用MOS管作为地址选择 开关。为了补偿因PN结漏电造成存储电荷(即数据)的丢失,必须周期性给于充电,即所 谓刷新。它的特点是单元结构简单、集成密度高、功耗低、每位价格便宜,因此常用于 大容量的存储器。
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